Title :
Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications
Author :
Mikkelson, Chad H. ; Seabaugh, Alan C. ; Beam, Edward A., III ; Luscombe, James H. ; Frazier, Gary A.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode (3bRTD) that can be depleted by the action of side gates. The 3bRTD features a double peak current-voltage characteristic in which the second valley current is less than the first valley current. Combination of the resonant tunneling transistor and a constant current load is shown to yield both binary and ternary logic and memory functions
Keywords :
field effect transistors; resonant tunnelling devices; semiconductor quantum wells; semiconductor storage; ternary logic; AlAs-InGaAs-InAs; InP-InGaAs; binary logic; constant current load; coupled-quantum-well field-effect resonant tunneling transistor; double peak current-voltage characteristic; first valley current; memory functions; multi-valued logic; second valley current; ternary logic; triple-barrier double-well resonant tunneling diode; vertical field-effect resonant tunneling transistor; Current-voltage characteristics; Diodes; Electrodes; Electrons; FETs; Indium phosphide; Logic circuits; Multivalued logic; RLC circuits; Resonant tunneling devices;
Journal_Title :
Electron Devices, IEEE Transactions on
