Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

Author

Mikkelson, Chad H. ; Seabaugh, Alan C. ; Beam, Edward A., III ; Luscombe, James H. ; Frazier, Gary A.

Author_Institution

Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA

Volume

41

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

132

Lastpage

137

Abstract

A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode (3bRTD) that can be depleted by the action of side gates. The 3bRTD features a double peak current-voltage characteristic in which the second valley current is less than the first valley current. Combination of the resonant tunneling transistor and a constant current load is shown to yield both binary and ternary logic and memory functions

Keywords

field effect transistors; resonant tunnelling devices; semiconductor quantum wells; semiconductor storage; ternary logic; AlAs-InGaAs-InAs; InP-InGaAs; binary logic; constant current load; coupled-quantum-well field-effect resonant tunneling transistor; double peak current-voltage characteristic; first valley current; memory functions; multi-valued logic; second valley current; ternary logic; triple-barrier double-well resonant tunneling diode; vertical field-effect resonant tunneling transistor; Current-voltage characteristics; Diodes; Electrodes; Electrons; FETs; Indium phosphide; Logic circuits; Multivalued logic; RLC circuits; Resonant tunneling devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.277388

Filename

277388