• DocumentCode
    1053059
  • Title

    Electronic properties of the silicon-thermally grown tantalum oxide interface

  • Author

    Revesz, A.G. ; Allison, J.F.

  • Author_Institution
    COMSAT Laboratories, Clarksburg, MD
  • Volume
    23
  • Issue
    5
  • fYear
    1976
  • fDate
    5/1/1976 12:00:00 AM
  • Firstpage
    527
  • Lastpage
    529
  • Abstract
    MOS capacitance measurements showed that the Si-Ta2O5interface prepared by thermal oxidation at ∼530°C of vacuum deposited Ta film followed by a heat treatment at 350°C in N2-H2is characterized by a negative "oxide" charge (6 × 1011e/cm-2at flat-band) and by an interface state density of ∼ 1 × 1012cm-2(eV)-1. The room temperature instability is small. The breakdown strength is >8 × 106V/cm.
  • Keywords
    Capacitance; Contracts; Dielectric substrates; Electrons; Interface states; Laboratories; Oxidation; Propulsion; Semiconductor films; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18444
  • Filename
    1478458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1053059