Title :
Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors
Author :
Bigelow, Jeffrey M. ; Leburton, J.P.
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
We present a model for the calculation of the tunneling current in resonant interband tunneling devices based on a transfer-Hamiltonian formalism. The model is fully self-consistent and includes electrons and both light and heavy holes. In particular, we show the viability of the bipolar tunneling field-effect transistor as a three-terminal multiple-NDR device with predicted currents reaching over 1000 A/cm2 and theoretical peak-to-valley ratios up to 300
Keywords :
bipolar transistors; field effect transistors; negative resistance; resonant tunnelling devices; semiconductor device models; Al0.3Ga0.7As-GaAs; Al0.48In0.52As-In0.53Ga0.47 As; bipolar tunneling field-effect transistors; electron sublevel energies; heavy holes; light holes; peak-to-valley ratios; resonant interband tunneling; self-consistent model; three-terminal multiple-NDR device; transfer-Hamiltonian formalism; tunneling current; Charge carrier processes; Diodes; Electrons; FETs; Heterojunctions; Microwave transistors; P-n junctions; Proposals; Resonance; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
