Title :
Saturation velocity of electrons in GaAs
Author :
Houston, P.A. ; Evans, A. R G ; Houston, P.A. ; Evans, A.G.R.
Author_Institution :
University of Strathclyde, Glasgow, Scotland
fDate :
6/1/1976 12:00:00 AM
Abstract :
The saturation velocity of electrons in n-GaAs has been deduced from the v/E characteristic over a temperature range 130-400 K. The experimental values are compared with those predicted by a model assuming the velocity to be limited by intervalley scattering in the
Keywords :
Current measurement; Effective mass; Electron mobility; Gallium arsenide; Ohmic contacts; Predictive models; Scattering; Temperature distribution; Velocity measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18456
