• DocumentCode
    1053428
  • Title

    A conductor-permalloy loop bubble domain memory

  • Author

    Shirakura, Takaichi ; Yoshihiro, Seiichi

  • Author_Institution
    Electrotechnical Laboratory, Chiyoda-ku, Tokyo, Japan
  • Volume
    9
  • Issue
    3
  • fYear
    1973
  • fDate
    9/1/1973 12:00:00 AM
  • Firstpage
    493
  • Lastpage
    495
  • Abstract
    A bubble-domain memory cell and a storage loop configuration are proposed. The basic operations of writing and shifting information, which include retention and ejection of bubble domains, have been tested. Experimental results for quasi-static operation using YFeO3have shown the anticipated operating margins. This configuration has advantages of both field and conductor access, i.e., selective operation of the storage loops, bidirectional shifting, etc.
  • Keywords
    Magnetic bubble memories; Conductors; Current supplies; Magnetic fields; Phase modulation; Power dissipation; Power system modeling; Production systems; Testing; Wiring; Writing;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1973.1067698
  • Filename
    1067698