DocumentCode
1053428
Title
A conductor-permalloy loop bubble domain memory
Author
Shirakura, Takaichi ; Yoshihiro, Seiichi
Author_Institution
Electrotechnical Laboratory, Chiyoda-ku, Tokyo, Japan
Volume
9
Issue
3
fYear
1973
fDate
9/1/1973 12:00:00 AM
Firstpage
493
Lastpage
495
Abstract
A bubble-domain memory cell and a storage loop configuration are proposed. The basic operations of writing and shifting information, which include retention and ejection of bubble domains, have been tested. Experimental results for quasi-static operation using YFeO3 have shown the anticipated operating margins. This configuration has advantages of both field and conductor access, i.e., selective operation of the storage loops, bidirectional shifting, etc.
Keywords
Magnetic bubble memories; Conductors; Current supplies; Magnetic fields; Phase modulation; Power dissipation; Power system modeling; Production systems; Testing; Wiring; Writing;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1973.1067698
Filename
1067698
Link To Document