Title :
Thermomigration processing of isolation grids in power structures
Author :
Anthony, Thomas R. ; Boah, John K. ; Chang, Mike F. ; Cline, Harvey E.
Author_Institution :
General Electric Corporation, Schenectady, NY
fDate :
8/1/1976 12:00:00 AM
Abstract :
Planar isolation structures in power devices are produced in 10 min by the migration of patterned liquid alloy zones through silicon wafers in a temperature gradient. Relative to conventional all-diffused and mesa-structured power devices, this unique technique of thermomigration produces a high yield of devices with blocking characteristics closely approaching those predicted by theory.
Keywords :
Annealing; Atmosphere; Chromium; Isolation technology; Manufacturing processes; Minerals; Silicon alloys; Solid state circuits; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18492
