p-i-n epitaxial structures for high power devices

p-i-n structures have been made with avalanche blocking voltages between 1200 and 5100 V, using an Al-diffusion profile and a thick epitaxial film to obtain the buffering n-layer. The device areas are between 2.5 and 10 cm². Epitaxial films of ∼50-µm thickness with a very low defect density have been obtained after an in situ gas phase etching with SF6of approximately 30 µm. The application of these p-i-n structures as a basic element for the development of very fast high voltage reverse non-blocking thyristors is briefly discussed.