Title :
High-voltage high-power gate-assisted turn-off thyristor for high-frequency use
Author :
Shimizu, Junji ; Oka, Hisao ; Funakawa, Shigeru ; Gamo, Hiroshi ; Iida, Takahiko ; Kawakami, Akira
Author_Institution :
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fDate :
8/1/1976 12:00:00 AM
Abstract :
The fast switching thyristor with an integrated rectifier-diode connected in antiparallel to the cathode-emitter junction of auxiliary thyristor has been made. This thyristor has the ratings of blocking voltage 1200 V, average current 400 A. The turn-off time of less than 6 µs can be obtained by applying -10 V gate bias. It has the interdigitated gate structure and the high-frequency current rating more than 500 A at 10 kHz.
Keywords :
Anodes; Cathodes; Electrodes; Failure analysis; Frequency; Impedance; Inverters; Leakage current; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18503
