• DocumentCode
    1053721
  • Title

    A quasi-stationary treatment of the turn-on delay phase of one-dimensional thyristors: Part I—Theory

  • Author

    Dannhäuser, Friedrich ; Voss, Peter

  • Author_Institution
    Siemens AG, München, Frankfurter Ring, Germany
  • Volume
    23
  • Issue
    8
  • fYear
    1976
  • fDate
    8/1/1976 12:00:00 AM
  • Firstpage
    928
  • Lastpage
    936
  • Abstract
    A qualitative discussion of the turn-on delay phase of one-dimensional thyristors is given, taking into account the effect of the charge of the free carriers on the width of the space-charge region. It is shown that in a resistive load circuit the slope of the load current rise goes to infinity for finite values of a critical current density. Along a simple quasi-stationary model the influence of varying voltage, n-base doping, n-base width, and gate current on the load current rise and on the critical current density is discussed quantitatively.
  • Keywords
    Circuits; Critical current density; Current density; Delay; Doping; Electrons; H infinity control; Quasi-doping; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18511
  • Filename
    1478524