DocumentCode
1053721
Title
A quasi-stationary treatment of the turn-on delay phase of one-dimensional thyristors: Part I—Theory
Author
Dannhäuser, Friedrich ; Voss, Peter
Author_Institution
Siemens AG, München, Frankfurter Ring, Germany
Volume
23
Issue
8
fYear
1976
fDate
8/1/1976 12:00:00 AM
Firstpage
928
Lastpage
936
Abstract
A qualitative discussion of the turn-on delay phase of one-dimensional thyristors is given, taking into account the effect of the charge of the free carriers on the width of the space-charge region. It is shown that in a resistive load circuit the slope of the load current rise goes to infinity for finite values of a critical current density. Along a simple quasi-stationary model the influence of varying voltage, n-base doping, n-base width, and gate current on the load current rise and on the critical current density is discussed quantitatively.
Keywords
Circuits; Critical current density; Current density; Delay; Doping; Electrons; H infinity control; Quasi-doping; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18511
Filename
1478524
Link To Document