A quasi-stationary treatment of the turn-on delay phase of one-dimensional thyristors: Part II—Experiments

In order to check the results derived in Part I, we investigated under constant voltage conditions the turn-on of thyristors that showed during the turn-on delay phase a close to one-dimensional behavior when operated with small gate currents. We investigated the dependence of the current rise on the gate current, on the n-base doping and its width, and on the applied voltage. For those thyristors that had technical design parameters with respect to the width and the doping of the n-base, the experimental rise curves could be fitted to a good approximation with theoretical curves derived from the simple quantitative model in Part I.