DocumentCode
1053753
Title
High current characteristics of asymmetrical p-i-n diodes having low forward voltage drops
Author
Naito, Masayoshi ; Matsuzaki, Hitoshi ; Ogawa, Takuzo
Author_Institution
Hitachi Ltd., Hitachi, Japan
Volume
23
Issue
8
fYear
1976
fDate
8/1/1976 12:00:00 AM
Firstpage
945
Lastpage
949
Abstract
A closed form solution for the forward characteristics of a very asymmetrical step-junction p-i-n diode at high current levels is derived and discussed. It is found that the forward voltage decreases significantly when the amount of the impurities per unit area of one of the highly doped regions is reduced. The theory is confirmed by experiment, and the diodes obtained show a low forward loss together with high reverse blocking voltage and fast reverse recovery.
Keywords
Charge carrier processes; Closed-form solution; Conductors; Current density; Electrons; Impurities; Low voltage; P-i-n diodes; Rectifiers; Scattering;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18514
Filename
1478527
Link To Document