Title :
Advanced Plasma and Advanced Gate Dielectric—A Charging Damage Prospective
Author_Institution :
Rutgers Univ., Piscataway
fDate :
3/1/2007 12:00:00 AM
Abstract :
Current status of plasma charging damage is assessed. The impact of wide adaptation of high density plasma in IC processing to charging damage is examined for advanced CMOS technology where ultrathin gate oxide is used. The issue of measurement is high-lighted. The resulting misconception of plasma charging damage is no longer a problem when gate oxide is ultrathin is explained as a result of measurement difficulty as well as previously unexpected longer oxide lifetime.
Keywords :
CMOS integrated circuits; integrated circuit reliability; plasma materials processing; CMOS technology; IC processing; advanced gate dielectric; advanced plasma; high density plasma; oxide lifetime; plasma charging damage; ultrathin gate oxide; CMOS technology; Dielectrics; Plasma density; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Stress; Tunneling; Voltage; CMOS; gate oxide; plasma damage; reliability;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.902471
