Title :
Dynamic cathode boundary fields and transferred electron oscillators
Author_Institution :
United Technologies Research Center, East Hartford, CT
fDate :
9/1/1976 12:00:00 AM
Abstract :
The evolution of a generalized time-dependent cathode boundary field model is discussed, and calculations are presented which demonstrate its applicability for explaining such diverse phenomena as 1) the appearance of anomalously high efficiency oscillations in InP and 2) the more moderate oscillatory behavior associated with GaAs.
Keywords :
Boundary conditions; Cathodes; Contacts; Current density; Electrons; Gallium arsenide; Indium phosphide; Microwave devices; Oscillators; Power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18528
