Title :
A circuit design for the improvement of radiation hardness in CMOS digital circuits
Author :
Chen, Chao-Cheng ; Liu, Sow-Chang ; Hsiao, Cheng-Cheng ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
4/1/1992 12:00:00 AM
Abstract :
A design consideration for digital CMOS circuits that are almost insensitive to radiation is proposed. By adding three n-MOSFETs to the conventional digital CMOS circuits, good radiation-hard behavior is observed in the inverter, NOR, and NAND gates under SPICE simulation. Detailed circuit design consideration and the simulation results are given
Keywords :
CMOS integrated circuits; digital integrated circuits; logic CAD; logic gates; radiation hardening (electronics); NAND gates; NOR gates; SPICE simulation; circuit design; digital CMOS circuits; inverter; n-MOSFETs; radiation hardness; CMOS digital integrated circuits; Chaos; Circuit simulation; Circuit synthesis; Digital circuits; Fabrication; Inverters; MOSFET circuits; SPICE; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
