• DocumentCode
    1053941
  • Title

    X-Ray Radiation Effect in DRAM Retention Time

  • Author

    Ditali, Akram ; Ma, Manny Kin ; Johnston, Michael

  • Author_Institution
    Micron Technol. Inc., Boise
  • Volume
    7
  • Issue
    1
  • fYear
    2007
  • fDate
    3/1/2007 12:00:00 AM
  • Firstpage
    105
  • Lastpage
    111
  • Abstract
    For quality verification, an X-ray inspection process is commonly being used for evaluating obscured and defective solder joints in surface-mount technologies, such as ball grid arrays and flip chips. Integrated circuits subjected to any form of radiation, i.e., ionizing or nonionizing, may incur some amount of damage depending on the absorbed dose. Though most X-ray inspections for high-quality imaging require ionizing dose amounts that are considered inconsequential for device failure or non-functionality, the degree of latent damage must be carefully considered. This paper discusses X-ray-induced vulnerabilities of high-density dynamic random access memory exposed to low ionizing radiation levels typical in X-ray inspection systems. We look at critical parameters and their sensitivity in relation to varying dose amounts of X-ray irradiation. In consideration of different methodologies of reducing radiation dose amounts and limiting device exposure, we propose a procedure for attenuating potentially harmful X-ray radiation levels while preserving quality images.
  • Keywords
    DRAM chips; X-ray effects; inspection; quality control; radiation hardening (electronics); DRAM retention time; X-ray inspection process; X-ray radiation effect; defective solder joints; degradation thermal annealing; dynamic random access memory; high-quality imaging; integrated circuits; junction leakage; latent damage; quality verification; surface-mount technology; Electronics packaging; Flip chip; Inspection; Ionizing radiation; Optical imaging; Radiation effects; Random access memory; Soldering; Surface-mount technology; X-ray imaging; Junction leakage; X-ray radiation; X-ray-induced damage; latent damage; refresh degradation thermal annealing;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2007.891530
  • Filename
    4271488