DocumentCode :
1053941
Title :
X-Ray Radiation Effect in DRAM Retention Time
Author :
Ditali, Akram ; Ma, Manny Kin ; Johnston, Michael
Author_Institution :
Micron Technol. Inc., Boise
Volume :
7
Issue :
1
fYear :
2007
fDate :
3/1/2007 12:00:00 AM
Firstpage :
105
Lastpage :
111
Abstract :
For quality verification, an X-ray inspection process is commonly being used for evaluating obscured and defective solder joints in surface-mount technologies, such as ball grid arrays and flip chips. Integrated circuits subjected to any form of radiation, i.e., ionizing or nonionizing, may incur some amount of damage depending on the absorbed dose. Though most X-ray inspections for high-quality imaging require ionizing dose amounts that are considered inconsequential for device failure or non-functionality, the degree of latent damage must be carefully considered. This paper discusses X-ray-induced vulnerabilities of high-density dynamic random access memory exposed to low ionizing radiation levels typical in X-ray inspection systems. We look at critical parameters and their sensitivity in relation to varying dose amounts of X-ray irradiation. In consideration of different methodologies of reducing radiation dose amounts and limiting device exposure, we propose a procedure for attenuating potentially harmful X-ray radiation levels while preserving quality images.
Keywords :
DRAM chips; X-ray effects; inspection; quality control; radiation hardening (electronics); DRAM retention time; X-ray inspection process; X-ray radiation effect; defective solder joints; degradation thermal annealing; dynamic random access memory; high-quality imaging; integrated circuits; junction leakage; latent damage; quality verification; surface-mount technology; Electronics packaging; Flip chip; Inspection; Ionizing radiation; Optical imaging; Radiation effects; Random access memory; Soldering; Surface-mount technology; X-ray imaging; Junction leakage; X-ray radiation; X-ray-induced damage; latent damage; refresh degradation thermal annealing;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2007.891530
Filename :
4271488
Link To Document :
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