Title :
Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers
Author :
Gye Mo Yang ; MacDougal, M.H. ; Pudikov, V. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The influeuce of mirror reflectivity on laser performance of InGaAs-GaAs vertical-cavity surface-emitting lasers fabricated by selective oxidation is investigated by the stepwise change of the number of pairs in top mirror stack after device fabrication. Devices with 18-pair stacks in the top mirror, which is the optimized number of pairs in this structure, show an output power over 1.9 mW and a slope efficiency of 55% while maintaining a low threshold current of 212 μA. The analysis of the threshold current and differential efficiency related to mirror reflectivity shows an internal quantum efficiency of 95%, an internal round-trip loss of 0.072, and a transparency current density of 71 A/cm2.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; optical fabrication; optical losses; oxidation; quantum well lasers; reflectivity; surface emitting lasers; 1.9 mW; 212 muA; 55 percent; InGaAs-GaAs; InGaAs-GaAs vertical-cavity surface-emitting laser fabrication; device fabrication; differential efficiency; internal quantum efficiency; internal round-trip loss; laser performance; low threshold current; mirror reflectivity; optimized; output power; quantum well lasers; selective oxidation; slope efficiency; stepwise change; top mirror stack; transparency current density; very-low-threshold vertical-cavity surface-emitting lasers; Current density; Laser transitions; Mirrors; Optical device fabrication; Oxidation; Power generation; Reflectivity; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
