Title :
Fabrication and performance of selectively oxidized vertical-cavity lasers
Author :
Choquette, Kent D. ; Lear, K.L. ; Schneider, R.P., Jr. ; Geib, K.M. ; Figiel, J.J. ; Hull, Robert
Author_Institution :
Photonics Res. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We report the high yield fabrication and reproducible performance of selectively oxidized vertical-cavity surface emitting lasers. We show that linear oxidation rates of AlGaAs without an induction period allows reproducible fabrication of buried oxide current apertures within monolithic distributed Bragg reflectors. The oxide layers do not induce obvious crystalline defects, and continuous wave operation in excess of 650 h has been obtained. The high yield fabrication enables relatively high laser performance over a wide wavelength span. We observe submilliamp threshold currents over a wavelength range of up to 75 nm, and power conversion efficiencies at 1 mW output power of greater than 20% over a 50-nm wavelength range.<>
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; oxidation; quantum well lasers; surface emitting lasers; 1 mW; 20 percent; 650 h; 980 nm; AlGaAs; buried oxide current apertures; continuous wave operation; crystalline defects; high yield fabrication; linear oxidation rates; monolithic distributed Bragg reflectors; output power; oxide layers; power conversion efficiencies; relatively high laser performance; reproducible performance; selectively oxidized vertical-cavity surface emitting lasers; submilliamp threshold currents; wide wavelength span; Apertures; Crystallization; Distributed Bragg reflectors; Optical device fabrication; Oxidation; Power conversion; Power generation; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE