A new MOS radiation-induced charge: negative fixed interface charge

Author

Shanfield, Zef ; Brown, George A. ; Revesz, Akos G. ; Hughes, Harold L.

Author_Institution

Rockwell Int. Sci. Center, Anaheim, CA, USA

Volume

39

Issue

2

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

303

Lastpage

307

Abstract

The irradiation behavior [up to ~1.3 Mrad (SiO₂)] of MOS capacitors (50-nm-thick dry-grown SiO₂, Al, or poly-Si gate) with or without postoxidation annealing (POA) in Ar at 1000°C has been studied by conventional capacitance-voltage (C-V ) analysis and thermally stimulated current techniques. The most important finding is that all of the samples processed for radiation hardness, i.e., without POA, exhibited a charge compensation effect. The radiation-induced positive oxide charge is partially compensated by a negative fixed interface charge that either lies outside the energy range accessible by C-V and similar techniques or extends spatially away from the interface into the oxide without acquiring the characteristics of a bulk oxide charge

Keywords

annealing; capacitors; metal-insulator-semiconductor devices; radiation hardening (electronics); thermally stimulated currents; 1.3×10⁶ rad; 1000 degC; Al-SiO₂-Si; MOS capacitors; capacitance; charge compensation effect; irradiation behavior; negative fixed interface charge; postoxidation annealing; radiation hardness; radiation-induced positive oxide charge; thermally stimulated current; voltage; Annealing; Argon; Artificial intelligence; Capacitance-voltage characteristics; Furnaces; Instruments; Interface states; MOS capacitors; MOS devices; Radiation hardening;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.277501

Filename

277501