• DocumentCode
    1054005
  • Title

    Evidence for 3-D/2-D Transition in Advanced Interconnects

  • Author

    Guedj, C. ; Claret, N. ; Arnal, V. ; Aimadeddine, M. ; Barnes, J.P.

  • Author_Institution
    LETI-Minatec, Grenoble
  • Volume
    7
  • Issue
    1
  • fYear
    2007
  • fDate
    3/1/2007 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    68
  • Abstract
    Electrical, electrooptical, mechanical, and microstructural characterizations explain why the leakage currents in advanced Cu/ultralow-interconnects can change from bulk (3-D) to mostly interfacial (2-D) above 150degC. A physical model consistent with all these results is proposed.
  • Keywords
    dielectric materials; integrated circuit interconnections; integrated circuit reliability; interface phenomena; leakage currents; 3-D-2-D transition; Cu - Element; electrical characterization; electrooptical characterization; interface phenomena; leakage currents; mechanical characterization; microstructural characterization; ultralow-interconnects; Capacitance; Dielectric measurements; Interface phenomena; Leakage current; Semiconductor device modeling; Temperature dependence; Testing; Thermal conductivity; Thermal degradation; Tunneling; Dielectric; interconnections; interface phenomena; leakage currents; reliability;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2007.902172
  • Filename
    4271494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054005