Title :
Evidence for 3-D/2-D Transition in Advanced Interconnects
Author :
Guedj, C. ; Claret, N. ; Arnal, V. ; Aimadeddine, M. ; Barnes, J.P.
Author_Institution :
LETI-Minatec, Grenoble
fDate :
3/1/2007 12:00:00 AM
Abstract :
Electrical, electrooptical, mechanical, and microstructural characterizations explain why the leakage currents in advanced Cu/ultralow-interconnects can change from bulk (3-D) to mostly interfacial (2-D) above 150degC. A physical model consistent with all these results is proposed.
Keywords :
dielectric materials; integrated circuit interconnections; integrated circuit reliability; interface phenomena; leakage currents; 3-D-2-D transition; Cu - Element; electrical characterization; electrooptical characterization; interface phenomena; leakage currents; mechanical characterization; microstructural characterization; ultralow-interconnects; Capacitance; Dielectric measurements; Interface phenomena; Leakage current; Semiconductor device modeling; Temperature dependence; Testing; Thermal conductivity; Thermal degradation; Tunneling; Dielectric; interconnections; interface phenomena; leakage currents; reliability;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.902172
