Title :
1.55-μm dual-polarization lasers implemented with compressive- and tensile-strained quantum wells
Author :
Mathur, A. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Active regions containing both compressive- and tensile-strained quantum wells can he used to fabricate dual-polarization lasers and polarization insensitive amplifiers. We present experimental and theoretical results of dual-polarization lasers operating at 1.55 μm. A six quantum-well laser structure containing alternately placed compressive- and tensile-strained quantum wells was found to lase in both transverse electric (TE) and transverse magnetic (TM) polarizations simultaneously. The temperature characteristics of these devices are analyzed theoretically and found to depend strongly on the choice of the barrier band gap.
Keywords :
energy gap; laser theory; laser transitions; light polarisation; quantum well lasers; waveguide lasers; 1.55 mum; InGaAs-InGaAsP; active regions; barrier band gap; compressive-strained quantum wells; dual-polarization lasers; polarization insensitive amplifiers; ridge waveguide laser; six quantum-well laser structure; temperature characteristics; tensile-strained quantum wells; transverse electric polarizations; transverse magnetic polarizations; Charge carrier processes; Laser theory; Optical amplifiers; Optical device fabrication; Optical fiber polarization; Optical polarization; Quantum well lasers; Tellurium; Temperature; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
