Title :
A note on carrier densities in p-n junctions
Author_Institution :
Technion-Israel Institute of Technology, Haifa, Israel
fDate :
9/1/1976 12:00:00 AM
Abstract :
The accuracy of the Boltzmann relation for the derivation of p-n junction forward characteristics is examined by relatively simple analysis, when recombinations in the depletion layer are negligible. The Boltzmann relation for carrier densities is found to be applicable in wide-base diodes, but in thin-base diodes and transistors, carrier densities can be smaller than those calculated with the Boltzmann relation.
Keywords :
Charge carrier density; Current density; Electrons; Equations; Gallium arsenide; Indium phosphide; Microwave amplifiers; P-n junctions; Semiconductor diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18541
