• DocumentCode
    1054017
  • Title

    A note on carrier densities in p-n junctions

  • Author

    Klein, Nicholas

  • Author_Institution
    Technion-Israel Institute of Technology, Haifa, Israel
  • Volume
    23
  • Issue
    9
  • fYear
    1976
  • fDate
    9/1/1976 12:00:00 AM
  • Firstpage
    1094
  • Lastpage
    1095
  • Abstract
    The accuracy of the Boltzmann relation for the derivation of p-n junction forward characteristics is examined by relatively simple analysis, when recombinations in the depletion layer are negligible. The Boltzmann relation for carrier densities is found to be applicable in wide-base diodes, but in thin-base diodes and transistors, carrier densities can be smaller than those calculated with the Boltzmann relation.
  • Keywords
    Charge carrier density; Current density; Electrons; Equations; Gallium arsenide; Indium phosphide; Microwave amplifiers; P-n junctions; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18541
  • Filename
    1478554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054017