DocumentCode :
1054030
Title :
Redistribution of ion-implanted impurities in silicon during diffusion in oxidizing ambients
Author :
Wu, C.P. ; Douglas, E.C. ; Mueller, C.W.
Author_Institution :
RCA Laboratories, Princeton, NJ
Volume :
23
Issue :
9
fYear :
1976
fDate :
9/1/1976 12:00:00 AM
Firstpage :
1095
Lastpage :
1097
Abstract :
A closed form expression for the redistribution of ion-implanted impurities in silicon during diffusion in an oxidizing ambient is derived, based on a theoretical model proposed by Huang and Welliver. It is shown that the computed results for boron profiles agree very well with experimental data. The closed form solution requires considerably less computer execution time than the usual numerical solution.
Keywords :
Charge carrier density; Current density; Electrostatics; Equations; Impurities; Inspection; Neodymium; Permittivity; Semiconductor diodes; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18542
Filename :
1478555
Link To Document :
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