DocumentCode :
1054036
Title :
JFET-transistor yields device with negative resistance
Author :
Porter, John A.
Author_Institution :
Siliconix Inc., Santa Clara, CA
Volume :
23
Issue :
9
fYear :
1976
fDate :
9/1/1976 12:00:00 AM
Firstpage :
1098
Lastpage :
1099
Abstract :
A composite p-channel ion implanted JFET and an n-p-n bipolar transistor which exhibits a negative resistance region and a positive feedback path is described in this correspondence.
Keywords :
Bipolar transistors; Contacts; Equivalent circuits; Fabrication; Implants; Ion implantation; Negative feedback; Oscillators; Semiconductor devices; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18543
Filename :
1478556
Link To Document :
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