• DocumentCode
    1054036
  • Title

    JFET-transistor yields device with negative resistance

  • Author

    Porter, John A.

  • Author_Institution
    Siliconix Inc., Santa Clara, CA
  • Volume
    23
  • Issue
    9
  • fYear
    1976
  • fDate
    9/1/1976 12:00:00 AM
  • Firstpage
    1098
  • Lastpage
    1099
  • Abstract
    A composite p-channel ion implanted JFET and an n-p-n bipolar transistor which exhibits a negative resistance region and a positive feedback path is described in this correspondence.
  • Keywords
    Bipolar transistors; Contacts; Equivalent circuits; Fabrication; Implants; Ion implantation; Negative feedback; Oscillators; Semiconductor devices; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18543
  • Filename
    1478556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054036