Asymmetric cladding-ridge waveguide laser by selective-area MOCVD

Author

Smith, G.M. ; Forbes, D.V. ; Lammert, R.M. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

7

Issue

11

fYear

1995

Firstpage

1255

Lastpage

1257

Abstract

Ridge waveguide lasers with a thin upper cladding layer are fabricated with a two-step selective-area MOCVD growth. The lower cladding, active region, and upper cladding are all grown in the initial MOCVD growth. A second growth over an oxide pattern is used to define the ridge with 0.15 μm of GaAs, which serves as both the contact and index increasing layer. Ridge lasers fabricated by this method (3×425 μm) have a cw threshold current of 12.6 mA, slope efficiency of 0.26 W/A, and operate in a fundamental transverse mode as well as stable fundamental lateral mode to 20 times threshold.

Keywords

claddings; laser modes; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 0.15 mum; 12.6 mA; 3 mum; 425 mum; InGaAs-GaAs-AlGaAs; active region; asymmetric cladding-ridge waveguide laser; contact; cw threshold current; fundamental transverse mode; index increasing layer; initial MOCVD growth; lower cladding; oxide pattern; second growth; selective-area MOCVD; slope efficiency; stable fundamental lateral mode; thin upper cladding layer; threshold; two-step selective-area MOCVD growth; upper cladding; Etching; Laser modes; Laser stability; MOCVD; Optical losses; Optical scattering; Optical sensors; Optical waveguides; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473463

Filename

473463