DocumentCode
105408
Title
Nanographene device fabrication using atomic force microscope
Author
Ahmad, Mohiuddin ; Yongho Seo ; Young Jin Choi
Author_Institution
Graphene Res. Inst., Sejong Univ., Seoul, South Korea
Volume
8
Issue
8
fYear
2013
fDate
Aug-13
Firstpage
422
Lastpage
425
Abstract
A report is presented on the local anodic oxidation of graphene film prepared by chemical vapour deposition using contact mode atomic force microscopy. Raman spectroscopy was used to check the uniformity and thickness of large area graphene film. Various kinds of patterns such as lines, ribbons and further, more complex structures, such as hexagons, two-terminal bar-like devices, were written by varying the tip voltage from -6 to -12 V and the tip speed from 60 to 200 nm/s. It was found that one can easily write any kind of patterns by just manipulating the tip voltage and tip speed instead of concentrating on other factors such as controlled humidity conditions, applied force on the tip and tip current. Also, it is confirmed that with an increase in tip voltage and by slowing the tip movement during lithography, one can write very narrow and sharp patterns which are important factors for the fabrication of graphene-based electronic devices.
Keywords
Raman spectra; anodisation; atomic force microscopy; chemical vapour deposition; graphene; nanofabrication; nanolithography; C; Raman spectroscopy; chemical vapour deposition; contact mode atomic force microscopy; controlled humidity condition; film thickness; film uniformity; graphene film; lithography; local anodic oxidation; nanographene device fabrication; tip speed; tip voltage; two terminal bar like device;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2013.0199
Filename
6587980
Link To Document