Stable operation in 0.87-μm light-emitting diode on Si substrate using Al-free materials

Author

Egawa, T. ; Dong, J. ; Matsumoto, K. ; Jimbo, T. ; Umeno, M.

Author_Institution

Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan

Volume

7

Issue

11

fYear

1995

Firstpage

1264

Lastpage

1266

Abstract

A reliable 877-nm InGaP-GaAs light-emitting diode (LED) is grown on a Si substrate by metalorganic chemical vapor deposition. A conventional Al-contained AlGaAs-GaAs LED on a Si substrate exhibits a rapid degradation because of formation of dark-line defects (DLD´s). On the contrary, an Al-free InGaP-GaAs LED on a Si substrate has no significant growth of DLD´s, As a result, a stable operation for more than 1500 h has been achieved in an InGaP-GaAs LED on a Si substrate.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; life testing; light emitting diodes; semiconductor device reliability; semiconductor device testing; semiconductor growth; stability; substrates; vapour phase epitaxial growth; 0.87 mum; Al-contained AlGAs-GaAs LED; Al-free materials; AlGaAs-GaAs; InGaP-GaAs; InGaP-GaAs light-emitting diode; LED; Si; Si substrate; dark-line defects; light-emitting diode; metalorganic chemical vapor deposition; rapid degradation; stable operation; Chemical vapor deposition; Degradation; Diode lasers; Gallium arsenide; Light emitting diodes; MOCVD; Residual stresses; Surface morphology; Thermal expansion; Thermal stresses;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473466

Filename

473466