Title :
Transient behavior of impact ionization in silicon
Author :
Shekhar, Chandra ; Khokle, W.S.
Author_Institution :
Central Electronics Engineering Research Institutes, Pilani, (Raj.), India
fDate :
9/1/1976 12:00:00 AM
Abstract :
A transient solution of the ionization coefficient for electrons (α) in silicon has been obtained for various electric field strengths. The results show that α takes a longer time to come to its steady-state value for lower electric field strengths. The time the transient lasts is of the order of 10-13s.
Keywords :
Aerospace electronics; Effective mass; Electron optics; Impact ionization; Optical scattering; Phonons; Photonic band gap; Silicon; Solids; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18549
