• DocumentCode
    1054104
  • Title

    Radiation tolerant silicon gate CMOS/SOS using ion implantation

  • Author

    Ipri, A.C. ; Flatley, D.W.

  • Author_Institution
    RCA Corporation, David Sarnoff Research Center, Princeton, NJ
  • Volume
    23
  • Issue
    9
  • fYear
    1976
  • fDate
    9/1/1976 12:00:00 AM
  • Firstpage
    1110
  • Lastpage
    1112
  • Abstract
    A process technology is described which incorporates ion implantation for the fabrication of CMOS/SOS silicon-gate integrated circuits. The n and p channel transistors are shown to have normal device characteristics and, in addition, exhibit an increased tolerance to threshold shifts in radiation environments.
  • Keywords
    Aluminum; Annealing; Boron; CMOS technology; Fabrication; Integrated circuit technology; Ion implantation; Oxidation; Resists; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18550
  • Filename
    1478563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054104