DocumentCode
1054124
Title
New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation
Author
Parthasarathy, Chittoor R. ; Denais, M. ; Huard, Vincent ; Ribes, Guillaume ; Vincent, Emmanuel ; Bravaix, Alain
Author_Institution
STMicroelectron., Crolles
Volume
7
Issue
1
fYear
2007
fDate
3/1/2007 12:00:00 AM
Firstpage
130
Lastpage
137
Abstract
In this paper, we investigate the recovery characteristics associated with negative bias temperature instability and channel hot carrier degradation in p-channel metal-oxide-semiconductor using a novel method of on-the-fly patterns of biases. We demonstrate experimentally that we can identify two types of mechanisms associated with degradation. One of them is associated with recovery dynamics, and the other relates to nonrecoverable degradation.
Keywords
MOSFET; hot carriers; semiconductor device reliability; channel hot carrier degradation; negative bias temperature instability; nonrecoverable degradation; p-channel metal-oxide- semiconductor; recovery dynamics; Circuits; Degradation; Hot carriers; MOSFETs; Negative bias temperature instability; Niobium compounds; Plasma temperature; Probes; Stress; Titanium compounds; Channel hot carrier (CHC); negative bias temperature instability (NBTI); on-the-fly (OTF) pattern method; recovery; trapping;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2007.898085
Filename
4271506
Link To Document