• DocumentCode
    1054149
  • Title

    ESD Evaluation of the Emerging MuGFET Technology

  • Author

    Russ, Christian C. ; Gossner, Harald ; Schulz, Thomas ; Chaudhary, Nirmal ; Xiong, Weize ; Marshall, Andrew ; Duvvury, Charvaka ; Schrüfer, Klaus ; Cleavelin, C. Rinn

  • Author_Institution
    Infineon Technol. AG, Munich
  • Volume
    7
  • Issue
    1
  • fYear
    2007
  • fDate
    3/1/2007 12:00:00 AM
  • Firstpage
    152
  • Lastpage
    161
  • Abstract
    Electrostatic discharge (ESD) characteristics of fully depleted FinFET devices are presented and compared to planar structures manufactured in the same multiple-gate FET Technology. FinFET-type MOS devices in breakdown mode are found to show an unprecedented sensitivity to ESD stress, while planar devices and FinFET gated diodes perform reasonably and with - characteristics beneficial for ESD protection.
  • Keywords
    electrostatic discharge; field effect transistors; silicon-on-insulator; FinFET devices; MuGFET technology; electrostatic discharge; failure analysis; silicon on insulator; transmission line pulse; CMOS technology; Charge carriers; Electrostatic discharge; FETs; FinFETs; Instruments; Isolation technology; Manufacturing; Partial discharges; Silicon on insulator technology; Electrostatic discharge (ESD); FinFET; failure analysis; multiple-gate FET (MuGFET); silicon on insulator (SOI); transmission line pulse (TLP);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2006.888288
  • Filename
    4271509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054149