DocumentCode :
1054162
Title :
The Enhancement of 
-Factor of Planar Spiral Inductor With Low-Temperature Annealing
Author :
Sun, Hongfang ; Liu, Zewen ; Zhao, Jiahao ; Wang, Li ; Zhu, Jing
Author_Institution :
Tsinghua Univ., Beijing
Volume :
55
Issue :
3
fYear :
2008
fDate :
3/1/2008 12:00:00 AM
Firstpage :
931
Lastpage :
936
Abstract :
In this paper, we demonstrate an effective way of annealing in vacuum to enhance the -Factor of planar spiral inductors for RF applications. The impact on the enhancement of the Q has been quantitatively analyzed using an equivalent circuit model. For the on-top type spiral inductor on silicon substrates, the peak value of Q-Factor is increased by 32.4% and 45.9% after annealing at 250degC and 350degC, respectively. The annealed copper coil exhibits an observable reduction in cavity defects, leading to a significant -enhancement due to the improvement in conductivity. A decrease in substrate resistance for an annealed inductor is also observed, which has a negative influence on enhancement. However, the final increment of the Q-Factor by annealing proves that the contribution of the copper coil is dominant.
Keywords :
annealing; equivalent circuits; inductors; low-temperature techniques; annealed inductor; equivalent circuit model; low-temperature annealing; planar spiral inductor; Annealing; Coils; Conductivity; Copper; Equivalent circuits; Inductors; Q factor; Radio frequency; Silicon; Spirals; Annealing; RF; equivalent circuit model; quality factor; spiral inductor;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.915091
Filename :
4444644
Link To Document :
