DocumentCode :
1054185
Title :
Polarization-insensitive, monolithic 4 x 4 InGaAsP-InP laser amplifier gate switch matrix
Author :
Van Berlo, Wim ; Janson, Mats ; Lundgren, Lena ; Mörner, Ann-Caroline ; Terlecki, Jerzy ; Gustavsson, Mats ; Granestrand, Per ; Svensson, Per
Author_Institution :
Opto & Microwave Electron. Div., Ericsson Components AB, Stockholm, Sweden
Volume :
7
Issue :
11
fYear :
1995
Firstpage :
1291
Lastpage :
1293
Abstract :
Monolithically integrated 4/spl times/4 semiconductor laser amplifier gate switch arrays comprising twenty-four integrated laser amplifiers have been designed, fabricated, and evaluated. Low fiber-to-fiber loss, low polarization dependence, high extinction ratio, and low crosstalk are reported.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; light polarisation; optical crosstalk; optical fibre losses; optical switches; semiconductor laser arrays; semiconductor lasers; semiconductor switches; 4/spl times/4 semiconductor laser amplifier; high extinction ratio; integrated laser amplifiers; laser amplifier gate switch arrays; laser amplifier gate switch matrix; laser fabrication; low crosstalk; low fiber-to-fiber loss; low polarization dependence; monolithic 4/spl times/4 InGaAsP-InP laser amplifier; monolithically integrated; polarization-insensitive; Fiber lasers; Laser feedback; Optical amplifiers; Optical fiber polarization; Optical switches; Optical waveguides; Power semiconductor switches; Semiconductor laser arrays; Semiconductor optical amplifiers; Transmission line matrix methods;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.473475
Filename :
473475
Link To Document :
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