• DocumentCode
    1054186
  • Title

    A multi MRad hardened 8 bit/20 MHz flash ADC

  • Author

    Baille, F. ; Borel, G. ; Commere, B. ; Roy, F. ; Delmas, C. ; Terrier, C.

  • Author_Institution
    Thomson Composants Militaires et Spatiaux, Saint-Egreve, France
  • Volume
    39
  • Issue
    3
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    401
  • Lastpage
    404
  • Abstract
    An 8-bit, 20-MHz flash ADC (analog-to-digital converter) using a radiation-hardened SOI (silicon on insulator) process is presented. The circuit is capable of operating at up to 20 MHz, even after a total dose exposure of 100 Mrad (SiO2) (10 keV X-rays). Simultaneous use of a rad-hard technology and optimized design in order to withstand the effects of a total dose made it possible to achieve a rad-hard product
  • Keywords
    CMOS integrated circuits; X-ray effects; analogue-digital conversion; integrated circuit technology; radiation hardening (electronics); 10 keV; 1E8 rad; 20 MHz; 8 bit; CMOS SOI; Si-SiO2; X-rays; analog-to-digital converter; flash ADC; optimized design; rad-hard technology; radiation-hardened SOI; silicon on insulator; total dose exposure; Binary codes; CMOS logic circuits; CMOS technology; Clocks; Flip-flops; Master-slave; Production; Radiation hardening; Read only memory; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.277526
  • Filename
    277526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054186