Title :
Voltage distributions in X-band n+-n-n+Gunn devices using a SEM
Author :
Fentem, Philip John ; Gopinath, Anand
Author_Institution :
University College of North Wales, Gwynedd, UK
fDate :
10/1/1976 12:00:00 AM
Abstract :
The SEM has been used as a voltage measuring probe to obtain voltage distributions in X-band n+-n-n+mesa structure Gunn devices. Dynamic distributions are obtained by operating the instrument in the stroboscopic mode. The results show accumulation layers in the oscillating device and the amplifier mode has a high field anode region.
Keywords :
Computer simulation; Electron beams; Electron emission; Geometry; Gunn devices; Instruments; Probes; Scanning electron microscopy; Spatial resolution; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18562
