DocumentCode :
1054236
Title :
Radiation-induced displacement damage in silicon carbide blue light-emitting diodes
Author :
Bräunig, D. ; Fritsch, D. ; Lehmann, B. ; Barry, A.L.
Author_Institution :
Hahn-Meitner-Inst. Berlin GmbH, Germany
Volume :
39
Issue :
3
fYear :
1992
fDate :
6/1/1992 12:00:00 AM
Firstpage :
428
Lastpage :
430
Abstract :
The effect of electron irradiation on the minority carrier lifetime of silicon carbide (SiC) light-emitting diodes has been evaluated. It is shown that the frequency-domain lifetime measuring technique used on GaAs LEDs (light emitting diodes) can be used successfully on SiC devices to determine a unique value for damage constant at energies not too close to threshold. Although the electron threshold energy for displacement damage is lower than that for GaAs by a factor of 2.5 because of the smaller mass of the carbon atom, at energies above 0.5 MeV the damage constant for SiC is more than three orders of magnitude lower than for GaAs, indicating greatly superior performance in most radiation environments. Preliminary annealing studies indicate significantly different recovery behavior for damage by electrons of different energies
Keywords :
electron beam effects; light emitting diodes; semiconductor materials; silicon compounds; 0.5 MeV; SiC; blue LEDs; blue light-emitting diodes; damage constant; electron irradiation; frequency-domain lifetime measuring technique; minority carrier lifetime; radiation induced displacement damage; recovery behavior; semiconductors; Annealing; Atomic measurements; Carbon dioxide; Charge carrier lifetime; Electrons; Energy measurement; Frequency measurement; Gallium arsenide; Light emitting diodes; Silicon carbide;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.277531
Filename :
277531
Link To Document :
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