• DocumentCode
    1054290
  • Title

    Proton bombarded GaAlAs:GaAs light emitting diodes

  • Author

    Heinen, J. ; Westermeier, H. ; Harth, W. ; Zschauer, K.-H.

  • Author_Institution
    Technische Universität München, München
  • Volume
    23
  • Issue
    10
  • fYear
    1976
  • fDate
    10/1/1976 12:00:00 AM
  • Firstpage
    1186
  • Lastpage
    1187
  • Abstract
    High-speed high-radiance luminescent diodes for optical transmission systems have been fabricated. Proton bombardment is used for confining the area of the active region. Modulation cutoff frequencies of 170 MHz and a radiance of 11 W/ sr. cm2at a diode current of 100 mA have been measured.
  • Keywords
    Capacitance; Current density; Current measurement; Etching; Gold; Heat sinks; High speed optical techniques; Light emitting diodes; Protons; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18568
  • Filename
    1478581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054290