DocumentCode
1054301
Title
Enhanced capacitor for one-transistor memory cell
Author
Sodini, Charles G. ; Kamins, Theodore I.
Author_Institution
Hewlett-Packard Laboratories, Palo Alto, CA
Volume
23
Issue
10
fYear
1976
fDate
10/1/1976 12:00:00 AM
Firstpage
1187
Lastpage
1189
Abstract
Ion implantation has been used to increase the depletion-layer capacitance beneath the inversion layer of an MOS capacitor in order to enhance the charge storage per unit area. Boron and arsenic implants were used to increase the depletion-layer capacitance, approximately halving the area required for a given charge storage.
Keywords
Boron; Capacitance; Conductors; Electron devices; Implants; Light emitting diodes; MOS capacitors; Protection; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18569
Filename
1478582
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