In-situ measurement of crystalline-amorphous transition in Si substrates during ion implantation

Author

Swart, Pieter L. ; Lacquet, Beatrys M. ; Aharoni, Herzl

Author_Institution

Mater. Lab., Rand Afrikaans Univ., Johannesburg, South Africa

Volume

39

Issue

3

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

464

Lastpage

467

Abstract

In situ reflectometry during ion implantation of ³¹P ⁺ onto single crystal Si substrates at implantation energies between 50 and 240 keV, and using a dose rate of 0.2 μA/cm², has yielded new information, opening a new avenue for ion implantation research. The results show that the slope of the rapidly rising part of the reflectivity versus dose graph and the amorphization dose are increasing functions of implantation energy. The total work up to the amorphization dose and the work required for a phase change are calculated from the experimental data

Keywords

amorphisation; elemental semiconductors; ion implantation; phosphorus; reflectivity; silicon; substrates; 50 to 240 keV; Si:³¹P⁺; amorphization dose; crystalline-amorphous transition; dose; implantation energy; ion implantation; reflectivity; semiconductor; substrates; Amorphous materials; Annealing; Crystallization; Ion implantation; Optical materials; Optical refraction; Optical scattering; Optical variables control; Reflectivity; Reflectometry;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.277546

Filename

277546