• DocumentCode
    1054376
  • Title

    16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver

  • Author

    Gutierrez-Aitken, A.L. ; Yang, K. ; Zhang, X. ; Haddad, G.I. ; Bhattacharya, P. ; Lunardi, L.M.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    7
  • Issue
    11
  • fYear
    1995
  • Firstpage
    1339
  • Lastpage
    1341
  • Abstract
    A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized. The p-i-n photodiode is implemented using the InGaAs base and collector layers of the HBT. A three-stage amplifier with a feedback resistance of 550 /spl Omega/ demonstrated a transimpedance gain of 46 dB/spl Omega/ and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz/spl Omega/. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation.<>
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; feedback amplifiers; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 16 GHz; 20 GHz; 20 Gbit/s; 550 ohm; InAlAs-InGaAs; InAlAs-InGaAs HBT structure; InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver; InP; design; fabrication; feedback resistance; integrated photoreceiver; lattice-matched; p-i-n photodiode; p-i-n transimpedance-amplifier photoreceiver; three-stage amplifier; transimpedance gain; transimpedance-bandwidth product; Bandwidth; Electrical resistance measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Metallization; Molecular beam epitaxial growth; Optical amplifiers; P-i-n diodes; PIN photodiodes;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.473491
  • Filename
    473491