Title :
Ternary semiconductor ZnSe0.7Te0.3 nanowires
Author :
Shanying Li ; Qing Su ; Haipeng Zhao ; Damin Tian
Author_Institution :
Sch. of Chem. & Mater. Eng., Henan Univ. of Urban Constr., Pingdingshan, China
Abstract :
Ternary semiconductor ZnSe0.7Te0.3 nanowires (NWs) are synthesised by using a thermal evaporation method, and the as-synthesised NWs have a wurtzite structure with a growth direction of [001]. The electrical measurements are carried out based on nano-field-effect transistors fabricated by individual NWs, and the electron transport characteristics reveal that the ZnSe0.7Te0.3 NWs have p-type conductivity with a high-mobility (μh) of 0.9 cm2 V-1S-1 and carrier concentration (nh) 5 × 1018 cm-3. Photoluminescence measurements for ZnSe0.7Te0.3 NWs show a dominant emission peaked at 478 nm which is the emission of free exciton.
Keywords :
II-VI semiconductors; carrier density; carrier mobility; electrical conductivity; excitons; field effect transistors; nanofabrication; nanowires; photoluminescence; semiconductor growth; vapour deposition; wide band gap semiconductors; zinc compounds; ZnSe0.7Te0.3; carrier concentration; electrical properties; electron transport; free exciton; mobility; nanofield-effect transistors; p-type conductivity; photoluminescence; ternary semiconductor nanowires; thermal evaporation; wurtzite structure;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2013.0139
