DocumentCode
1054479
Title
Comparison of GaAs and CdTe crystals for high-frequency intracavity coupling modulation of CO2 lasers
Author
Huang, Cheng-Chung ; Pao, Yoh-Han ; Claspy, P.C. ; Phelps, F.W., Jr.
Author_Institution
Lockheed Aircraft Corporation, Huntsville, AL, USA
Volume
10
Issue
2
fYear
1974
fDate
2/1/1974 12:00:00 AM
Firstpage
186
Lastpage
191
Abstract
High-frequency intracavity coupling modulation of the CO2 laser has recently attracted considerable interest as an efficient means of achieving wide-bandwidth modulation with low modulator drive power. In the present investigation, intracavity coupling modulation was achieved at 1 GHz. Both GaAs and CdTe crystals were investigated and an optical beat method was used to explore the operational characteristics of such systems without having to go to the expense and trouble of high-speed detectors. The modulation efficiencies at the 1-GHz modulation rate were 0.5 and 1 percent for GaAs and CdTe electrooptic modulators, respectively. Modulator crystal characteristics such as electrical resistivity, radiation absorption, crystal uniformity, etc., which are of critical importance for intracavity modulation, were also measured for both crystals.
Keywords
Absorption; Crystals; Electric resistance; Electric variables measurement; Electrooptic modulators; Gallium arsenide; High speed optical techniques; Optical coupling; Optical modulation; Power lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1974.1145806
Filename
1145806
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