Title :
I-5 laser operation between 0.9 and 1.1 µm with GaAs1-xSbxdouble heterostructures
Author :
Nahory, R.E. ; Pollack, M.A.
fDate :
11/1/1976 12:00:00 AM
Keywords :
DH-HEMTs; Epitaxial growth; Gallium arsenide; Gas lasers; Indium phosphide; Laser tuning; Optical materials; Optical pulses; Temperature; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18589
