• DocumentCode
    1054517
  • Title

    I-4 CW room-temperature GaAs/InyGa1-yP DH lasers prepared by vapor-phase epitaxy

  • Author

    Olsen, G.H. ; Ettenberg, M.

  • Volume
    23
  • Issue
    11
  • fYear
    1976
  • fDate
    11/1/1976 12:00:00 AM
  • Firstpage
    1248
  • Lastpage
    1248
  • Keywords
    DH-HEMTs; Epitaxial growth; Gallium arsenide; Gas lasers; Laboratories; Laser tuning; Optical device fabrication; Optical materials; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18590
  • Filename
    1478603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1054517