Title :
Improved GaAs-based quantum cascade laser (λ∼11 μm) using high-reflectivity metal facet coating
Author :
Farmer, C.D. ; Stanley, C.R. ; Ironside, C.N. ; Garcia, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
11/7/2002 12:00:00 AM
Abstract :
By applying a high-reflectivity metal coating to the rear facet of a GaAs-based quantum cascade laser operating at λ∼11.5 μm, the threshold current has been reduced by 11% at 260 K and pulsed operation of the epilayer-up mounted device was extended from 283 to 294 K.
Keywords :
III-V semiconductors; gallium arsenide; laser cavity resonators; metallic thin films; optical films; quantum cascade lasers; reflectivity; 11 micron; 11.5 micron; 260 to 294 K; GaAs; GaAs-based quantum cascade laser; device fabrication; epilayer-up mounted device; high-reflectivity metal coating; laser cavity; laser performance improvement; metal-on-insulator coating; operation temperature increase; pulsed operation; rear facet; semiconductor laser; threshold current reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020988
