Title :
Low-threshold singlemode operation of membrane BH-DFB lasers
Author :
Okamoto, T. ; Nunoya, N. ; Onodera, Y. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fDate :
11/7/2002 12:00:00 AM
Abstract :
To achieve low-threshold stable singlemode operation of membrane distributed feedback lasers consisting of GaInAsP/InP single-quantum-well wirelike active regions, a narrow-stripe buried heterostructure and a narrow pump beam were adopted. Room-temperature continuous wave operation by photopumping at a low threshold of 1.5 mW was obtained for a 2 μm wide and 120 μm long device based on a 142 nm thick membrane structure. A side-mode suppression ratio (SMSR) of 42 dB was obtained at 8 times the threshold.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser stability; membranes; optical pumping; quantum well lasers; 1.5 mW; 120 micron; 142 nm; 2 micron; GaInAsP-InP; continuous wave operation; device fabrication; distributed feedback lasers; highly index-coupled structure; low-threshold singlemode operation; membrane BH-DFB lasers; narrow pump beam; narrow-stripe buried heterostructure; photopumping; room-temperature CW operation; semiconductor laser; side-mode suppression ratio; single QW wirelike active regions; single quantum-well active regions; stable singlemode operation; wafer bonding technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020975
