Title :
The control of channeling phenomenon
Author :
Shibata, Takeshi ; Hashimoto, Hiroshi ; Hirakawa, Tadahiko ; Tonari, Kazuhiko
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
The dependence of depth profile on a tilt and twist angle was investigated with a resolution of 0.05° using a stencil mask ion implanter that has less than 0.1° parallelism of ion beam. Angular dependence of depth profiles obtained by secondary ion mass spectrometry (SIMS) shows the channeling phenomenon can be controlled using a highly controlled parallel ion beam. This means that if tilt angle is controlled with a resolution of less than 0.1°, the variation caused by channeling phenomenon can be neglected. The threshold voltage data of n-type MOSFETs fabricated using a controlled parallel ion beam with resolution of less than 0.1° indicates that the variation is the same as that in the case of one fabricated using 7° implantation.
Keywords :
MOSFET; boron; channelling; ion implantation; secondary ion mass spectra; silicon; substrates; SIMS; Si:B; channeling phenomenon; controlled parallel ion beam; depth profile; n type MOSFET; secondary ion mass spectrometry; stencil mask ion implantation; threshold voltage data; tilt angle; twist angle; Electric variables; Ion beams; Ion implantation; MOSFETs; Optical collimators; Parallel processing; Semiconductor devices; Threshold voltage; Voltage control; Weight control; Channeling; implantation; stencil mask ion implanter; threshold voltage;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2004.831929
