Title :
IIB-5 charge capacity analysis of the charge-coupled RAM cell
Author :
Tasch, A.F. ; Fu, H.S. ; Holloway ; Frye, R.C.
fDate :
11/1/1976 12:00:00 AM
Keywords :
Charge-coupled image sensors; Circuits; DRAM chips; Electron beams; Electron devices; Instruments; Leakage current; Low voltage; Testing; X-ray lithography;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18605
