Title :
A 62-GHz monolithic InP-based HBT VCO
Author :
Wang, Huei ; Chang, Kwo-Wei ; Lo, Dennis Chung-Wen ; Tran, Liem T. ; Cowles, John C. ; Block, Thomas R. ; Dow, Gee Sam ; Oki, Aaron ; Streit, Dwight C. ; Allen, Barry R.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
A monolithic V-band VCO using InP-based HBT technology has been designed, fabricated, and tested. This VCO delivers a peak output power of 4 dBm at a center frequency of 62.4 GHz with a tuning range of 300 MHz. The measured phase noise shows -78 dBc/Hz at 100 kHz offset and -104 dBc/Hz at 1 MHz offset. To our knowledge, this is the highest frequency fundamental-mode oscillator ever reported using bipolar transistors
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MIMIC; circuit tuning; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 62.4 GHz; HBT MMIC; HBT VCO; InAlAs-InGaAs; InP; InP-based HBT technology; bipolar transistor oscillator; center frequency; fundamental-mode oscillator; monolithic V-band VCO; peak output power; phase noise; tuning range; Bipolar transistors; Frequency; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Phase noise; Power generation; Testing; Tuning; Voltage-controlled oscillators;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
