Title :
IIIB-1 a new interpretation of luminescence due to the N isoelectronic trap in GaAs1-xPx
Author :
Streetman, B.G. ; Wolford, D.J. ; Nelson, R.J.
fDate :
11/1/1976 12:00:00 AM
Keywords :
Diodes; Doping; Gallium arsenide; Luminescence; Neural networks; Optical design; Optical surface waves; Power generation; Radiative recombination; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18613
