Title :
Ka-band monolithic InGaAs/InP HBT VCO´s in CPW structure
Author :
Lin, J. ; Chen, Y.K. ; Humphrey, D.A. ; Hamm, R.A. ; Malik, R.J. ; Tate, Al ; Kopf, R.F. ; Ryan, R.W.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
Two Ka-band monolithic voltage controlled oscillators (VCO´s) designed in a coplanar waveguide (CPW) structure are described. Each VCO utilizes an InGaAs/InP heterojunction bipolar transistor (HBT) as the active device and an HBT base-collector junction as the tuning varactor. These two VCO´s are biased at a very low voltage of VCE=1.5 V and the emitter current is less than 10 mA. Under this low dc power dissipation, the VCO´s with center frequencies of 26.5 and 33.5 GHz show high dc-to-rf conversion efficiencies over 10% and 5% within the frequency tuning ranges of 1.6 and 1.2 GHz, respectively. The measured phase noise at 1 MHz offset frequency is -110 dBc/Hz
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MMIC; coplanar waveguides; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit noise; microwave oscillators; phase noise; voltage-controlled oscillators; 1.5 V; 10 mA; 10 percent; 26.5 GHz; 33.5 GHz; 5 percent; CPW structure; HBT base-collector junction; InGaAs-InP; InGaAs/InP HBT VCO; InGaAs/InP heterojunction bipolar transistor; Ka-band monolithic voltage controlled oscillators; center frequencies; coplanar waveguide structure; dc-to-rf conversion efficiencies; emitter current; frequency tuning ranges; low dc power dissipation; phase noise; tuning varactor; very low voltage; Coplanar waveguides; Frequency conversion; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Power dissipation; Tuning; Varactors; Voltage-controlled oscillators;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
